MSC015SMA070S

Microchip Technology

MSC015SMA070S

模拟与电源

SICFET N-CH 700V 126A D3PAK

在产TO-268-3, D³Pak (2 Leads + Tab), TO-268AA模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs19mOhm @ 40A, 20V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs215 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds4500 pF @ 700 V
制造商Microchip Technology
安装类型Surface Mount
Product StatusActive
技术SiCFET (Silicon Carbide)
Vgs (Max)+23V, -10V
Vgs(th) (Max) @ Id2.4V @ 4mA

电气

漏源电压700 V
Drive Voltage (Max Rds On, Min Rds On)20V
Current - Continuous Drain (Id) @ 25°C126A (Tc)
最大功耗370W (Tc)

机械

封装Tube
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
供应商器件封装D3PAK

环境

工作温度-55°C~175°C(TJ)