通用
| 基础料号 | 2N930 |
|---|---|
| 制造商 | Microchip Technology |
| 安装类型 | Through Hole |
| 包装 | Bulk |
| 产品状态 | 在产 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 500µA, 10mA |
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
|---|---|
| Current - Collector (Ic) (Max) | 30 mA |
| Current - Collector Cutoff (Max) | 2nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10µA, 5V |
| Power - Max | 300 mW |
机械
| Package / Case | TO-206AA, TO-18-3 Metal Can |
|---|---|
| 供应商器件封装 | TO-18 |
环境
| Grade | Military |
|---|---|
| 工作温度 | -55°C ~ 200°C (TJ) |
| Qualification | MIL-PRF-19500/253 |