通用
| 基础料号 | 2N6989 |
|---|---|
| 制造商 | Microchip Technology |
| 安装类型 | Through Hole |
| Product Status | Active |
| Transistor Type | 4 NPN (Quad) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - Collector Emitter Breakdown (Max) | 50V |
|---|---|
| Current - Collector (Ic) (Max) | 800mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Power - Max | 1.5W |
机械
| 封装 | Bulk |
|---|---|
| Package / Case | 14-DIP (0.300", 7.62mm) |
| 供应商器件封装 | TO-116 |
环境
| Grade | Military |
|---|---|
| 工作温度 | -65°C ~ 200°C (TJ) |
| Qualification | MIL-PRF-19500/559 |