通用
| 基础料号 | 2N6383 |
|---|---|
| 制造商 | Microchip Technology |
| 安装类型 | Through Hole |
| 包装 | Bulk |
| 产品状态 | 在产 |
| Transistor Type | NPN - Darlington |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 100mA, 10A |
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
|---|---|
| Current - Collector (Ic) (Max) | 10 A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A, 3V |
| Power - Max | 6 W |
机械
| Package / Case | TO-204AA, TO-3 |
|---|---|
| 供应商器件封装 | TO-204AA (TO-3) |
环境
| Grade | Military |
|---|---|
| 工作温度 | -55°C ~ 175°C (TJ) |
| Qualification | MIL-PRF-19500/523 |