通用
| 基础料号 | 2N6051 |
|---|---|
| 制造商 | Microchip Technology |
| 安装类型 | Through Hole |
| Product Status | Active |
| Transistor Type | PNP - Darlington |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 120mA, 12A |
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
|---|---|
| Current - Collector (Ic) (Max) | 12 A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 6A, 3V |
| Power - Max | 150 W |
机械
| 封装 | Bulk |
|---|---|
| Package / Case | TO-3 |
| 供应商器件封装 | TO-3 (TO-204AA) |
环境
| Grade | Military |
|---|---|
| 工作温度 | -55°C ~ 175°C (TJ) |
| Qualification | MIL-PRF-19500/501 |