JANTXV1N6622US/TR

Microchip Technology

JANTXV1N6622US/TR

模拟与电源

DIODE GEN PURP 660V 1.2A D-5A

在产SQ-MELF, A模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

制造商Microchip Technology
安装类型Surface Mount
Product StatusActive
Reverse Recovery Time (trr)30 ns
技术Standard

电气

Voltage - DC Reverse (Vr) (Max)660 V
Voltage - Forward (Vf) (Max) @ If1.4 V @ 1.2 A
Current - Average Rectified (Io)1.2A
Current - Reverse Leakage @ Vr500 nA @ 660 V
速度Fast Recovery =< 500ns, > 200mA (Io)

机械

封装Tape & Reel (TR)
Package / CaseSQ-MELF, A
供应商器件封装D-5A

环境

GradeMilitary
Operating Temperature - Junction-65°C ~ 150°C
QualificationMIL-PRF-19500/585