通用
| 基础料号 | 2N3810 |
|---|---|
| 制造商 | Microchip Technology |
| 安装类型 | Through Hole |
| Product Status | Active |
| Transistor Type | 2 NPN (Dual) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 100µA, 1mA |
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - Collector Emitter Breakdown (Max) | 60V |
|---|---|
| Current - Collector (Ic) (Max) | 30mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 1mA, 5V |
| Power - Max | 350mW |
机械
| 封装 | Tape & Reel (TR) |
|---|---|
| Package / Case | TO-78-6 Metal Can |
| 供应商器件封装 | TO-78-6 |
环境
| Grade | Military |
|---|---|
| 工作温度 | -65°C ~ 200°C (TJ) |
| Qualification | MIL-PRF-19500/336 |