JAN1N6076

Microchip Technology

JAN1N6076

模拟与电源

DIODE GEN PURP 50V 1.3A E-PAK

在产E, Axial模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号1N6076
制造商Microchip Technology
安装类型Through Hole
Product StatusActive
Reverse Recovery Time (trr)30 ns
技术Standard

电气

Voltage - DC Reverse (Vr) (Max)50 V
Voltage - Forward (Vf) (Max) @ If1.76 V @ 18.8 A
Current - Average Rectified (Io)1.3A
Current - Reverse Leakage @ Vr5 µA @ 50 V
速度Fast Recovery =< 500ns, > 200mA (Io)

机械

封装Bulk
Package / CaseE, Axial
供应商器件封装E-PAK

环境

GradeMilitary
Operating Temperature - Junction-65°C ~ 155°C
QualificationMIL-PRF-19500/503