JAN1N5819UR-1/TR

Microchip Technology

JAN1N5819UR-1/TR

模拟与电源

DIODE SCHOTTKY 45V 1A DO213AB

在产DO-213AB, MELF (Glass)模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号1N5819
Capacitance @ Vr, F70pF @ 5V, 1MHz
制造商Microchip Technology
安装类型Surface Mount
Product StatusActive
技术Schottky

电气

Voltage - DC Reverse (Vr) (Max)45 V
Voltage - Forward (Vf) (Max) @ If490 mV @ 1 A
Current - Average Rectified (Io)1A
Current - Reverse Leakage @ Vr50 µA @ 45 V
速度Fast Recovery =< 500ns, > 200mA (Io)

机械

封装Tape & Reel (TR)
Package / CaseDO-213AB, MELF (Glass)
供应商器件封装DO-213AB (MELF, LL41)

环境

GradeMilitary
Operating Temperature - Junction-65°C ~ 125°C
QualificationMIL-PRF-19500/586