JAN1N5804/TR

Microchip Technology

JAN1N5804/TR

模拟与电源

DIODE GEN PURP 100V 2.5A

在产A, Axial模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Capacitance @ Vr, F25pF @ 10V, 1MHz
制造商Microchip Technology
安装类型Through Hole
Product StatusActive
Reverse Recovery Time (trr)25 ns
技术Standard

电气

Voltage - DC Reverse (Vr) (Max)100 V
Voltage - Forward (Vf) (Max) @ If975 mV @ 2.5 A
Current - Average Rectified (Io)2.5A
Current - Reverse Leakage @ Vr1 µA @ 100 V
速度Fast Recovery =< 500ns, > 200mA (Io)

机械

封装Tape & Reel (TR)
Package / CaseA, Axial
供应商器件封装A, Axial

环境

GradeMilitary
Operating Temperature - Junction-65°C ~ 175°C
QualificationMIL-PRF-19500/477