JAN1N5622US

Microchip Technology

JAN1N5622US

模拟与电源

DIODE GEN PURP 1KV 1A D-5A

在产SQ-MELF, A模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号1N5622
制造商Microchip Technology
安装类型Surface Mount
Product StatusActive
Reverse Recovery Time (trr)2 µs
技术Standard

电气

Voltage - DC Reverse (Vr) (Max)1000 V
Voltage - Forward (Vf) (Max) @ If1.3 V @ 3 A
Current - Average Rectified (Io)1A
Current - Reverse Leakage @ Vr500 nA @ 1000 V
速度Standard Recovery >500ns, > 200mA (Io)

机械

封装Bulk
Package / CaseSQ-MELF, A
供应商器件封装D-5A

环境

GradeMilitary
Operating Temperature - Junction-65°C ~ 200°C
QualificationMIL-PRF-19500/427