JAN1N5420US

Microchip Technology

JAN1N5420US

模拟与电源

DIODE GEN PURP 600V 3A D-5B

在产SQ-MELF, E模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号1N5420
制造商Microchip Technology
安装类型Surface Mount
Product StatusActive
Reverse Recovery Time (trr)400 ns
技术Standard

电气

Voltage - DC Reverse (Vr) (Max)600 V
Voltage - Forward (Vf) (Max) @ If1.5 V @ 9 A
Current - Average Rectified (Io)3A
Current - Reverse Leakage @ Vr1 µA @ 600 V
速度Fast Recovery =< 500ns, > 200mA (Io)

机械

封装Bulk
Package / CaseSQ-MELF, E
供应商器件封装D-5B

环境

GradeMilitary
Operating Temperature - Junction-65°C ~ 175°C
QualificationMIL-PRF-19500/411