DN2625K4-G

Microchip Technology

DN2625K4-G

Datasheet

模拟与电源

MOSFET N-CH 250V 1.1A TO252

在产TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs3.5Ohm @ 1A, 0V
FET FeatureDepletion Mode
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs7.04 nC @ 1.5 V
Input Capacitance (Ciss) (Max) @ Vds1000 pF @ 25 V
制造商Microchip Technology
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs (Max)±20V

电气

漏源电压250 V
Drive Voltage (Max Rds On, Min Rds On)0V
Current - Continuous Drain (Id) @ 25°C1.1A (Tj)

机械

封装Tape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
供应商器件封装TO-252, (D-Pak)

环境

工作温度-55°C~150°C(TJ)