APT9M100S/TR

Name: APT9M100S/TR
Brand: Microchip Technology

模拟与电源

MOSFET MOS8 1000 V 9 A TO-268

在产TO-268-3, D³Pak (2 Leads + Tab), TO-268AA模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	1.4Ohm @ 5A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2605 pF @ 25 V
制造商	Microchip Technology
安装类型	Surface Mount
Product Status	Active
系列	POWER MOS 8™
技术	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	5V @ 1mA

漏源电压	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	9A (Tc)
最大功耗	335W (Tc)

工作温度	-55°C ~ 150°C (TJ)