APT80GA90S

Microchip Technology

APT80GA90S

模拟与电源

IGBT PT MOS 8 SINGLE 900 V 80 A

在产TO-268-3, D³Pak (2 Leads + Tab), TO-268AA模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号APT80GA90
Gate Charge200 nC
IGBT TypePT
输入类型Standard
制造商Microchip Technology
安装类型Surface Mount
Product StatusActive
系列POWER MOS 8®
Switching Energy1.625mJ (on), 1.389mJ (off)
Td (on/off) @ 25°C18ns/149ns
Test Condition600V, 47A, 4.7Ohm, 15V
Vce(on) (Max) @ Vge, Ic3.1V @ 15V, 47A

电气

Voltage - Collector Emitter Breakdown (Max)900 V
Current - Collector (Ic) (Max)145 A
Current - Collector Pulsed (Icm)239 A
Power - Max625 W

机械

封装Tube
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
供应商器件封装D3PAK

环境

工作温度-55°C~150°C(TJ)