通用
| Gate Charge | 200 nC |
|---|---|
| IGBT Type | PT |
| 输入类型 | Standard |
| 制造商 | Microchip Technology |
| 安装类型 | Through Hole |
| Product Status | Active |
| Reverse Recovery Time (trr) | 25 ns |
| 系列 | POWER MOS 8™ |
| Switching Energy | 1652µJ (on), 1389µJ (off) |
| Td (on/off) @ 25°C | 18ns/149ns |
| Test Condition | 600V, 47A, 4.7Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 3.1V @ 15V, 47A |