APT7F120S

Microchip Technology

APT7F120S

模拟与电源

MOSFET N-CH 1200V 7A D3PAK

在产TO-268-3, D³Pak (2 Leads + Tab), TO-268AA模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs2.4Ohm @ 3A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2565 pF @ 25 V
制造商Microchip Technology
安装类型Surface Mount
Product StatusActive
系列POWER MOS 8™
技术MOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 1mA

电气

漏源电压1200 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C7A (Tc)
最大功耗335W (Tc)

机械

封装Tube
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
供应商器件封装D3PAK

环境

工作温度-55°C~150°C(TJ)