APT75GN120B2G

Microchip Technology

APT75GN120B2G

模拟与电源

IGBT 1200V 200A 833W TMAX

在产TO-247-3 Variant模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号APT75GN120
Gate Charge425 nC
IGBT TypeTrench Field Stop
输入类型Standard
制造商Microchip Technology
安装类型Through Hole
Product StatusActive
Switching Energy8045µJ (on), 7640µJ (off)
Td (on/off) @ 25°C60ns/620ns
Test Condition800V, 75A, 1Ohm, 15V
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 75A

电气

Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)200 A
Current - Collector Pulsed (Icm)225 A
Power - Max833 W

机械

封装Tube
Package / CaseTO-247-3 Variant

环境

工作温度-55°C~150°C(TJ)