APT4F120S

Microchip Technology

APT4F120S

模拟与电源

MOSFET N-CH 1200V 4A D3PAK

在产TO-268-3, D³Pak (2 Leads + Tab), TO-268AA模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs4.2Ohm @ 2A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1385 pF @ 25 V
制造商Microchip Technology
安装类型Surface Mount
Product StatusActive
系列POWER MOS 8™
技术MOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 500µA

电气

漏源电压1200 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
最大功耗175W (Tc)

机械

封装Tube
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
供应商器件封装D3PAK