APT34N80B2C3G

Microchip Technology

APT34N80B2C3G

模拟与电源

MOSFET N-CH 800V 34A T-MAX

在产TO-247-3 Variant模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs145mOhm @ 22A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs355 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4510 pF @ 25 V
制造商Microchip Technology
安装类型Through Hole
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.9V @ 2mA

电气

漏源电压800 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C34A (Tc)
最大功耗417W (Tc)

机械

封装Tube
Package / CaseTO-247-3 Variant
供应商器件封装T-MAX™ [B2]

环境

工作温度-55°C~150°C(TJ)