通用
| Rds On (Max) @ Id, Vgs | 4Ohm @ 1A, 10V |
|---|---|
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 24 V |
| 制造商 | Microchip Technology |
| 安装类型 | Through Hole |
| Product Status | Active |
| 技术 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| 漏源电压 | 90 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 350mA (Tj) |
| 最大功耗 | 6.25W (Tc) |
机械
| 封装 | Bag |
|---|---|
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| 供应商器件封装 | TO-39 |
环境
| 工作温度 | -55°C~150°C(TJ) |
|---|