通用
| 基础料号 | 2N6353 |
|---|---|
| 制造商 | Microchip Technology |
| 安装类型 | Through Hole |
| Product Status | Active |
| Transistor Type | NPN - Darlington |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 10mA, 5A |
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
|---|---|
| Current - Collector (Ic) (Max) | 5 A |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A, 5V |
| Power - Max | 2 W |
机械
| 封装 | Bulk |
|---|---|
| Package / Case | TO-213AA, TO-66-3 |
| 供应商器件封装 | TO-66 (TO-213AA) |
环境
| 工作温度 | -65°C ~ 200°C (TJ) |
|---|