通用
| 基础料号 | 2N579 |
|---|---|
| 制造商 | Microchip Technology |
| 安装类型 | Through Hole |
| Product Status | Active |
| Transistor Type | 2 PNP (Dual) |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - Collector Emitter Breakdown (Max) | 60V |
|---|---|
| Current - Collector (Ic) (Max) | 600mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Power - Max | 600mW |
机械
| 封装 | Bulk |
|---|---|
| Package / Case | TO-78-6 Metal Can |
| 供应商器件封装 | TO-78-6 |
环境
| 工作温度 | -65°C ~ 175°C (TJ) |
|---|