1N6628/TR

Microchip Technology

1N6628/TR

模拟与电源

DIODE GEN PURP 600V 1.75A A-PAK

在产A, Axial模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

制造商Microchip Technology
安装类型Through Hole
Product StatusActive
Reverse Recovery Time (trr)45 ns
技术Standard

电气

Voltage - DC Reverse (Vr) (Max)600 V
Voltage - Forward (Vf) (Max) @ If1.35 V @ 2 A
Current - Average Rectified (Io)1.75A
Current - Reverse Leakage @ Vr2 µA @ 600 V
速度Fast Recovery =< 500ns, > 200mA (Io)

机械

封装Tape & Reel (TR)
Package / CaseA, Axial
供应商器件封装A, Axial

环境

Operating Temperature - Junction-65°C ~ 150°C