1N6624/TR

Microchip Technology

1N6624/TR

模拟与电源

DIODE GEN PURP 990V 1A A-PAK

在产A, Axial模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Capacitance @ Vr, F10pF @ 10V, 1MHz
制造商Microchip Technology
安装类型Through Hole
Product StatusActive
Reverse Recovery Time (trr)60 ns
技术Standard

电气

Voltage - DC Reverse (Vr) (Max)990 V
Voltage - Forward (Vf) (Max) @ If1.55 V @ 500 mA
Current - Average Rectified (Io)1A
Current - Reverse Leakage @ Vr500 nA @ 900 V
速度Fast Recovery =< 500ns, > 200mA (Io)

机械

封装Tape & Reel (TR)
Package / CaseA, Axial
供应商器件封装A, Axial

环境

Operating Temperature - Junction-65°C ~ 150°C