1N5811

Microchip Technology

1N5811

模拟与电源

DIODE GEN PURP 150V 3A B AXIAL

在产B, Axial模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Capacitance @ Vr, F60pF @ 10V, 1MHz
制造商Microchip Technology
安装类型Through Hole
Product StatusActive
Reverse Recovery Time (trr)30 ns
技术Standard

电气

Voltage - DC Reverse (Vr) (Max)150 V
Voltage - Forward (Vf) (Max) @ If875 mV @ 4 A
Current - Average Rectified (Io)3A
Current - Reverse Leakage @ Vr5 µA @ 150 V
速度Fast Recovery =< 500ns, > 200mA (Io)

机械

封装Bulk
Package / CaseB, Axial
供应商器件封装B, Axial

环境

Operating Temperature - Junction-65°C ~ 175°C