1N5806

Microchip Technology

1N5806

模拟与电源

DIODE GEN PURP 150V 1A A AXIAL

在产A, Axial模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Capacitance @ Vr, F25pF @ 10V, 1MHz
制造商Microchip Technology
安装类型Through Hole
Product StatusActive
Reverse Recovery Time (trr)25 ns
技术Standard

电气

Voltage - DC Reverse (Vr) (Max)150 V
Voltage - Forward (Vf) (Max) @ If875 mV @ 1 A
Current - Average Rectified (Io)1A
Current - Reverse Leakage @ Vr1 µA @ 150 V
速度Fast Recovery =< 500ns, > 200mA (Io)

机械

封装Bulk
Package / CaseA, Axial
供应商器件封装A, Axial

环境

Operating Temperature - Junction-65°C ~ 175°C