1N5550USE3

Microchip Technology

1N5550USE3

模拟与电源

DIODE GEN PURP 200V 3A B SQ-MELF

在产SQ-MELF, B模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

制造商Microchip Technology
安装类型Surface Mount
Product StatusActive
Reverse Recovery Time (trr)2 µs
技术Standard

电气

Voltage - DC Reverse (Vr) (Max)200 V
Voltage - Forward (Vf) (Max) @ If1.2 V @ 9 A
Current - Average Rectified (Io)3A
Current - Reverse Leakage @ Vr1 µA @ 200 V
速度Standard Recovery >500ns, > 200mA (Io)

机械

封装Bulk
Package / CaseSQ-MELF, B
供应商器件封装B, SQ-MELF

环境

Operating Temperature - Junction-65°C ~ 175°C