1N5186

Microchip Technology

1N5186

模拟与电源

DIODE GEN PURP 100V 3A AXIAL

在产B, Axial模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号1N5186
制造商Microchip Technology
安装类型Through Hole
Product StatusActive
Reverse Recovery Time (trr)150 ns
技术Standard

电气

Voltage - DC Reverse (Vr) (Max)100 V
Voltage - Forward (Vf) (Max) @ If1.5 V @ 9 A
Current - Average Rectified (Io)3A
Current - Reverse Leakage @ Vr2 µA @ 100 V
速度Fast Recovery =< 500ns, > 200mA (Io)

机械

封装Bulk
Package / CaseB, Axial
供应商器件封装B, Axial

环境

Operating Temperature - Junction-65°C ~ 175°C