1N4249/TR

Microchip Technology

1N4249/TR

模拟与电源

DIODE GEN PURP 1KV 1A

在产A, Axial模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

制造商Microchip Technology
安装类型Through Hole
Product StatusActive
Reverse Recovery Time (trr)5 µs
技术Standard

电气

Voltage - DC Reverse (Vr) (Max)1000 V
Voltage - Forward (Vf) (Max) @ If1.3 V @ 3 A
Current - Average Rectified (Io)1A
Current - Reverse Leakage @ Vr1 µA @ 1 V
速度Standard Recovery >500ns, > 200mA (Io)

机械

封装Tape & Reel (TR)
Package / CaseA, Axial
供应商器件封装A, Axial

环境

Operating Temperature - Junction-65°C ~ 175°C