MCMN2014HE3-TP

Micro Commercial Co

MCMN2014HE3-TP

模拟与电源

N-CHANNEL MOSFET, DFN2020-6LE

在产6-VDFN Exposed Pad模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs8mOhm @ 5A, 8V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs48 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds1791 pF @ 10 V
制造商Micro Commercial Co
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1.1V @ 250µA

电气

漏源电压12 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 8V
Current - Continuous Drain (Id) @ 25°C15A

机械

封装Tape & Reel (TR) Cut Tape (CT)

环境

GradeAutomotive
工作温度-55°C ~ 150°C (TJ)
QualificationAEC-Q101