通用
| 基础料号 | SS275 |
|---|---|
| Diode Configuration | 3 Independent |
| 制造商 | IXYS-RF |
| 安装类型 | Surface Mount |
| Product Status | Obsolete |
| Reverse Recovery Time (trr) | 0 ns |
| 技术 | SiC (Silicon Carbide) Schottky |
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 5 A |
| Current - Average Rectified (Io) (per Diode) | 5A |
| Current - Reverse Leakage @ Vr | 200 µA @ 1200 V |
| 速度 | No Recovery Time > 500mA (Io) |
机械
| 封装 | Tube |
|---|---|
| Package / Case | 6-SMD, Flat Lead Exposed Pad |
| 供应商器件封装 | DE275 |
环境
| Operating Temperature - Junction | -55°C ~ 175°C |
|---|