MMIX1F132N50P3

IXYS

MMIX1F132N50P3

模拟与电源

MOSFET N-CH 500V 63A 24SMPD

在产24-PowerSMD, 21 Leads模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs43mOhm @ 66A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds18600 pF @ 25 V
制造商IXYS
安装类型Surface Mount
Product StatusActive
系列HiPerFET™, Polar3™
技术MOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 8mA

电气

漏源电压500 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C63A (Tc)
最大功耗520W (Tc)

机械

封装Tube
Package / Case24-PowerSMD, 21 Leads
供应商器件封装24-SMPD

环境

工作温度-55°C~150°C(TJ)