IXTV02N250S

IXYS

IXTV02N250S

模拟与电源

MOSFET N-CH 2500V 200MA PLUS220

停产/老旧PLUS-220SMD模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs450Ohm @ 50mA, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs7.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds116 pF @ 25 V
制造商IXYS
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 250µA

电气

漏源电压2500 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C200mA (Tc)
最大功耗83W (Tc)

机械

封装Tube
Package / CasePLUS-220SMD
供应商器件封装PLUS-220SMD

环境

工作温度-55°C ~ 150°C (TJ)