IXTP14N60PM

IXYS

IXTP14N60PM

模拟与电源

MOSFET N-CH 600V 7A TO220

在产TO-220-3 Full Pack, Isolated Tab模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs550mOhm @ 7A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2500 pF @ 25 V
制造商IXYS
安装类型Through Hole
Product StatusActive
系列Polar
技术MOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5.5V @ 250µA

电气

漏源电压600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C7A (Tc)
最大功耗75W (Tc)

机械

封装Tube
Package / CaseTO-220-3 Full Pack, Isolated Tab
供应商器件封装TO-220 Isolated Tab

环境

工作温度-55°C ~ 150°C (TJ)