IXTI10N60P

Name: IXTI10N60P
Brand: IXYS

模拟与电源

MOSFET N-CH 600V 10A TO262

停产/老旧TO-262-3 Long Leads, I2PAK, TO-262AA模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	740mOhm @ 5A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1610 pF @ 25 V
制造商	IXYS
安装类型	Through Hole
包装	Tube
产品状态	停产/老旧
系列	PolarHV™
技术	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	5V @ 100µA

漏源电压	600 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
最大功耗	200W (Tc)

Package / Case	TO-262-3 Long Leads, I2PAK, TO-262AA
供应商器件封装	TO-262 (I2PAK)

工作温度	-55°C ~ 150°C (TJ)