IXTH36P10

IXYS

IXTH36P10

模拟与电源

MOSFET P-CH 100V 36A TO247

停产/老旧TO-247-3模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs75mOhm @ 18A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2800 pF @ 25 V
制造商IXYS
安装类型Through Hole
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id5V @ 250µA

电气

漏源电压100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C36A (Tc)
最大功耗180W (Tc)

机械

封装Tube
Package / CaseTO-247-3
供应商器件封装TO-247 (IXTH)

环境

工作温度-55°C ~ 150°C (TJ)