IXTF02N450

IXYS

IXTF02N450

模拟与电源

MOSFET N-CH 4500V 200MA I4PAC

在产i4-Pac™-5 (3 Leads)模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs750Ohm @ 10mA, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds256 pF @ 25 V
制造商IXYS
安装类型Through Hole
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id6.5V @ 250µA

电气

漏源电压4500 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C200mA (Tc)
最大功耗78W (Tc)

机械

封装Tube
Package / Casei4-Pac™-5 (3 Leads)
供应商器件封装ISOPLUS i4-PAC™

环境

工作温度-55°C ~ 150°C (TJ)