IXFT6N100F

Name: IXFT6N100F
Brand: IXYS

模拟与电源

MOSFET N-CH 1000V 6A TO268

停产/老旧TO-268-3, D³Pak (2 Leads + Tab), TO-268AA模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	1.9Ohm @ 3A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1770 pF @ 25 V
制造商	IXYS
安装类型	Surface Mount
Product Status	Obsolete
系列	HiPerRF™
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	5.5V @ 2.5mA

漏源电压	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
最大功耗	180W (Tc)

工作温度	-55°C ~ 150°C (TJ)