IXFP5N100PM

Name: IXFP5N100PM
Brand: IXYS

模拟与电源

MOSFET N-CH 1000V 2.3A TO220

在产TO-220-3 Full Pack, Isolated Tab模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	2.8Ohm @ 2.5A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	33.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1830 pF @ 25 V
制造商	IXYS
安装类型	Through Hole
Product Status	Active
系列	HiPerFET™, Polar
技术	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	6V @ 250µA

漏源电压	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	2.3A (Tc)
最大功耗	42W (Tc)

工作温度	-55°C~150°C(TJ)