IXFA22N65X2

Name: IXFA22N65X2
Brand: IXYS

模拟与电源

MOSFET N-CH 650V 22A TO263

在产TO-263-3, D²Pak (2 Leads + Tab), TO-263AB模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	160mOhm @ 11A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2310 pF @ 25 V
制造商	IXYS
安装类型	Surface Mount
Product Status	Active
系列	HiPerFET™, Ultra X2
技术	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	5.5V @ 1.5mA

漏源电压	650 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	22A (Tc)
最大功耗	390W (Tc)

工作温度	-55°C~150°C(TJ)