通用
| Gate Charge | 358 nC |
|---|---|
| 输入类型 | Standard |
| 制造商 | IXYS |
| 安装类型 | Through Hole |
| Product Status | Active |
| Reverse Recovery Time (trr) | 360 ns |
| 系列 | BIMOSFET™ |
| Switching Energy | 3.8mJ (off) |
| Td (on/off) @ 25°C | 26ns/418ns |
| Test Condition | 1360V, 42A, 1Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 6V @ 15V, 42A |