通用
| Gate Charge | 350 nC |
|---|---|
| 输入类型 | Standard |
| 制造商 | IXYS |
| 安装类型 | Through Hole |
| Product Status | Active |
| Reverse Recovery Time (trr) | 1.5 µs |
| 系列 | BIMOSFET™ |
| Vce(on) (Max) @ Vge, Ic | 3.1V @ 15V, 75A |

来自已导入产品 Attributes 的结构化电气、机械和环境参数。
| Gate Charge | 350 nC |
|---|---|
| 输入类型 | Standard |
| 制造商 | IXYS |
| 安装类型 | Through Hole |
| Product Status | Active |
| Reverse Recovery Time (trr) | 1.5 µs |
| 系列 | BIMOSFET™ |
| Vce(on) (Max) @ Vge, Ic | 3.1V @ 15V, 75A |
| Voltage - Collector Emitter Breakdown (Max) | 1700 V |
|---|---|
| Current - Collector (Ic) (Max) | 200 A |
| Current - Collector Pulsed (Icm) | 580 A |
| Power - Max | 1040 W |
| 封装 | Tube |
|---|---|
| Package / Case | TO-264-3, TO-264AA |
| 供应商器件封装 | TO-264AA |
| 工作温度 | -55°C ~ 150°C (TJ) |
|---|