来自已导入产品 Attributes 的结构化电气、机械和环境参数。
| Gate Charge | 210 nC |
|---|---|
| 输入类型 | Standard |
| 制造商 | IXYS |
| 安装类型 | Through Hole |
| Product Status | Not For New Designs |
| Reverse Recovery Time (trr) | 1.7 µs |
| 系列 | BIMOSFET™ |
| Td (on/off) @ 25°C | 46ns/205ns |
| Test Condition | 960V, 50A, 5Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 50A |
| Voltage - Collector Emitter Breakdown (Max) | 3600 V |
|---|---|
| Current - Collector (Ic) (Max) | 70 A |
| Current - Collector Pulsed (Icm) | 420 A |
| Power - Max | 290 W |
| 封装 | Tube |
|---|---|
| Package / Case | i4-Pac™-5 (3 Leads) |
| 供应商器件封装 | ISOPLUS i4-PAC™ |
| 工作温度 | -55°C ~ 150°C (TJ) |
|---|