来自已导入产品 Attributes 的结构化电气、机械和环境参数。
| Gate Charge | 62 nC |
|---|---|
| IGBT Type | NPT |
| 输入类型 | Standard |
| 制造商 | IXYS |
| 安装类型 | Surface Mount |
| Product Status | Active |
| Reverse Recovery Time (trr) | 1.4 µs |
| 系列 | BIMOSFET™ |
| Td (on/off) @ 25°C | 40ns/166ns |
| Test Condition | 960V, 14A, 20Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 14A |
| Voltage - Collector Emitter Breakdown (Max) | 3000 V |
|---|---|
| Current - Collector (Ic) (Max) | 38 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 200 W |
| 封装 | Tube |
|---|---|
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| 供应商器件封装 | TO-263 |
| 工作温度 | -55°C~150°C(TJ) |
|---|