通用
| Rds On (Max) @ Id, Vgs | 240mOhm @ 10.6A, 10V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1280 pF @ 25 V |
| 制造商 | Infineon Technologies |
| 安装类型 | Through Hole |
| Product Status | Active |
| 系列 | Automotive, AEC-Q101, SIPMOS® |
| 技术 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.1V @ 1.54mA |