通用
| Rds On (Max) @ Id, Vgs | 950mOhm @ 2.8A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 22.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 580 pF @ 25 V |
| 制造商 | Infineon Technologies |
| 安装类型 | Through Hole |
| Product Status | Active |
| 系列 | CoolMOS™ |
| 技术 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 5.5V @ 200µA |