SPN02N60S5

Name: SPN02N60S5
Brand: Infineon Technologies

模拟与电源

MOSFET N-CH 600V 400MA SOT223-4

停产/老旧TO-261-4, TO-261AA模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	3Ohm @ 1.1A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	250 pF @ 25 V
制造商	Infineon Technologies
安装类型	Surface Mount
Product Status	Obsolete
系列	CoolMOS™
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	5.5V @ 80µA

漏源电压	600 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	400mA (Ta)
最大功耗	1.8W (Ta)

工作温度	-55°C ~ 150°C (TJ)