SPI80N08S2-07

Infineon Technologies

SPI80N08S2-07

模拟与电源

MOSFET N-CH 75V 80A TO262-3

停产/老旧TO-262-3 Long Leads, I²Pak, TO-262AA模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs7.4mOhm @ 66A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6130 pF @ 25 V
制造商Infineon Technologies
安装类型Through Hole
Product StatusObsolete
系列OptiMOS™
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

电气

漏源电压75 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
最大功耗300W (Tc)

机械

封装Tube
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
供应商器件封装PG-TO262-3-1

环境

工作温度-55°C~175°C(TJ)