SPI10N10

Name: SPI10N10
Brand: Infineon Technologies

模拟与电源

MOSFET N-CH 100V 10.3A TO262-3

已停产TO-262-3 Long Leads, I²Pak, TO-262AA模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	170mOhm @ 7.8A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	426 pF @ 25 V
制造商	Infineon Technologies
安装类型	Through Hole
Product Status	Discontinued at
系列	SIPMOS®
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 21µA

漏源电压	100 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	10.3A (Tc)
最大功耗	50W (Tc)

工作温度	-55°C ~ 175°C (TJ)